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| SI4346DY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.023 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 0.030 @ VGS = 3.0 V 0.036 @ VGS = 2.5 V ID (A) 8 7.5 6.8 6.0 Qg (Typ) D TrenchFETr Gen II Power MOSFET D 100% Rg Tested APPLICATIONS D High-Side DC/DC Conversion - Notebook - Desktop - Server D Notebook Logic DC/DC, Low-Side 6.5 65 SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D G D S Ordering Information: SI4346DY--E3 SI4346DY-T1--E3 ( with Tape and Reel) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "12 8 6.5 30 2.2 2.5 1.6 Steady State Unit V 5.9 4.7 A 1.20 1.31 0.84 -55 to 150 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72958 S-41793--Rev. B, 04-Oct-04 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 43 74 22 Maximum 50 95 27 Unit _C/W C/W 1 SI4346DY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 8 A Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 7.5 A VGS = 3.0 V, ID = 6.8 A VGS = 2.5 V, ID = 6.0 A VDS = 15 V, ID = 8 A IS = 2.2 A, VGS = 0 V 20 0.019 0.021 0.023 0.027 32 0.75 1.1 0.023 0.025 0.030 0.036 S V W 0.7 2.0 "100 1 5 V nA mA A Symbol Test Condition Min Typ Max Unit Forward Transconductancea Diode Forward Voltagea gfs VSD Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.2 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.25 VDS = 15 V, VGS = 4.5 V, ID = 8 A 6.5 2.3 1.1 0.5 9 11 40 7 20 0.75 15 17 60 11 35 ns W 10 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 25 I D - Drain Current (A) 20 15 10 5 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) www.vishay.com 2V VGS = 10 thru 3 V 30 25 I D - Drain Current (A) 20 15 10 TC = 125_C 5 0 0.0 25_C -55_C 1.5 2.0 2.5 3.0 Transfer Characteristics 0.5 1.0 VGS - Gate-to-Source Voltage (V) Document Number: 72958 S-41793--Rev. B, 04-Oct-04 2 SI4346DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.040 r DS(on) - On-Resistance ( W ) 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 0 5 10 15 20 25 30 200 0 0 5 10 15 20 25 30 Coss Crss VGS = 10 V VGS = 4.5 V C - Capacitance (pF) 1200 1000 800 600 400 Vishay Siliconix Capacitance Ciss ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 6 V GS - Gate-to-Source Voltage (V) 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 Qg - Total Gate Charge (nC) VDS = 15 V ID = 8 A 1.4 rDS(on) - On-Resiistance (Normalized) 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 8 A 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 40 TJ = 150_C TJ = 25_C 0.05 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on) - On-Resistance ( W ) 0.04 0.03 ID = 8 A 1 0.02 0.01 0.1 0.0 0.00 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72958 S-41793--Rev. B, 04-Oct-04 www.vishay.com 3 SI4346DY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0.2 ID = 250 mA V GS(th) Variance (V) -0.0 -0.2 -0.4 -0.6 -0.8 -50 20 Power (W) 60 100 Single Pulse Power, Junction-to-Ambient 80 40 -25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 Time (sec) 1 10 TJ - Temperature (_C) 100 Safe Operating Area rDS(on) Limited* IDM Limited 10 I D - Drain Current (A) 1 ms 1 ID(on) Limited 10 ms 100 ms 1s 10 s dc 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified 0.1 TA = 25_C Single Pulse Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 71_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 www.vishay.com 4 Document Number: 72958 S-41793--Rev. B, 04-Oct-04 SI4346DY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72958. Document Number: 72958 S-41793--Rev. B, 04-Oct-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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